050-7134 rev - 3-2003 characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, i d = 4a) zero gate voltage drain current (v ds = 800v, v gs = 0v) zero gate voltage drain current (v ds = 500v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 1000 8 1.60 250 500 100 35 apt1001r6bll/sll 1000 8 32 30 40 266 2.13 -55 to 150 300 4 16 425 g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com to-247 d 3 pak bll sll power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. apt1001r6bll APT1001R6SLL 1000v 8a 1.60 ? ? ? ? ? ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? to-247 or surface mount d 3 pak package power mos 7 r mosfet
apt1001r6bll/sll 050-7134 rev - 3-2003 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse dynamic characteristics z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 symbol r jc r ja min typ max 0.47 40 unit c/w characteristic junction to case junction to ambient symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 500v i d = 8a @ 25c v gs = 15v v dd = 500v s i d = 8a @ 25c r g = 0.6 ? min typ max 1322 230 42 53 7 35 18 18 32 19 unit pf nc ns characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -8a) reverse recovery time (i s = -8a, dl s /dt = 100a/s) reverse recovery charge (i s = -8a, dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 8 32 1.3 630 6.1 10 symbol i s i sm v sd t rr q rr dv / dt source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 13.28mh, r g = 25 ? , peak i l = 8a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 8a di / dt 700a/s v r v dss t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein.
050-7134 rev - 3-2003 typical performance curves r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 5.5v 6v 7v 5v v gs =15,10 & 7.5v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle 6.5v 0 5 10 15 20 25 30 012345678 0246810121416 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 18 16 14 12 10 8 6 4 2 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.2 1.1 1.0 0.9 0.8 0.7 0.6 20 18 16 14 12 10 8 6 4 2 0 8 7 6 5 4 3 2 1 0 2.5 2.0 1.5 1.0 0.5 0.0 i d = 4a v gs = 10v normalized to v gs = 10v 4a 0.205 0.264 0.00544f 0.0981f power (watts) rc model junction temp. ( ?c) case temperature apt1001r6bll/sll v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, lo w voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature
apt1001r6bll/sll 050-7134 rev - 3-2003 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) revised 8/29/97 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) revised 4/18/95 d 3 pak package outline v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 1000 0 10 20 30 40 50 0 10 20 30 40 50 60 70 80 0.3 0.5 0.7 0.9 1.1 1.3 1.5 33 10 5 1 .5 .1 16 12 8 4 0 10ms 1ms 100s t c =+25c t j =+150c single pulse operation here limited by r ds (on) v ds =500v v ds =200v v ds =800v i d = 8a t j =+150c t j =+25c c rss c iss c oss 5,000 1,000 100 10 200 100 10 1 apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved.
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